磁控濺射是(shi)物理氣相沉(chen)積(ji)的一種。

磁(ci)控濺射(she)的(de)(de)(de)(de)工作原理是指電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)場(chang)E的(de)(de)(de)(de)作用(yong)下，在(zai)(zai)(zai)飛(fei)(fei)(fei)向(xiang)基片(pian)(pian)過程中與氬(ya)原子(zi)(zi)(zi)(zi)發生(sheng)碰(peng)撞(zhuang)(zhuang)，使(shi)其電(dian)(dian)(dian)(dian)離(li)產生(sheng)出Ar正離(li)子(zi)(zi)(zi)(zi)和新(xin)的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi);新(xin)電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)飛(fei)(fei)(fei)向(xiang)基片(pian)(pian)，Ar離(li)子(zi)(zi)(zi)(zi)在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)場(chang)作用(yong)下加速(su)飛(fei)(fei)(fei)向(xiang)陰極靶，并以(yi)較(jiao)高能量(liang)(liang)轟(hong)擊(ji)(ji)靶表(biao)面，使(shi)靶材發生(sheng)濺射(she)。在(zai)(zai)(zai)濺射(she)粒子(zi)(zi)(zi)(zi)中，中性的(de)(de)(de)(de)靶原子(zi)(zi)(zi)(zi)或(huo)分子(zi)(zi)(zi)(zi)沉積在(zai)(zai)(zai)基片(pian)(pian)上(shang)形成薄(bo)膜(mo)，而(er)產生(sheng)的(de)(de)(de)(de)二(er)(er)次電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)會受到電(dian)(dian)(dian)(dian)場(chang)和磁(ci)場(chang)作用(yong)，產生(sheng)E(電(dian)(dian)(dian)(dian)場(chang))×B(磁(ci)場(chang))所指的(de)(de)(de)(de)方(fang)向(xiang)漂移，簡稱(cheng)E×B漂移，其運(yun)動(dong)軌跡近似(si)于一條擺線。若(ruo)為環(huan)形磁(ci)場(chang)，則電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)就以(yi)近似(si)擺線形式在(zai)(zai)(zai)靶表(biao)面做圓周(zhou)運(yun)動(dong)，它們的(de)(de)(de)(de)運(yun)動(dong)路徑不僅很長(chang)，而(er)且(qie)被束縛在(zai)(zai)(zai)靠近靶表(biao)面的(de)(de)(de)(de)等離(li)子(zi)(zi)(zi)(zi)體(ti)區域(yu)內，并且(qie)在(zai)(zai)(zai)該區域(yu)中電(dian)(dian)(dian)(dian)離(li)出大量(liang)(liang)的(de)(de)(de)(de)Ar 來轟(hong)擊(ji)(ji)靶材，從(cong)而(er)實(shi)現了較(jiao)高的(de)(de)(de)(de)沉積速(su)率(lv)。隨著碰(peng)撞(zhuang)(zhuang)次數(shu)的(de)(de)(de)(de)增加，二(er)(er)次電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)的(de)(de)(de)(de)能量(liang)(liang)消(xiao)耗殆(dai)盡，逐漸遠離(li)靶表(biao)面，并在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)場(chang)E的(de)(de)(de)(de)作用(yong)下沉積在(zai)(zai)(zai)基片(pian)(pian)上(shang)。由于該電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)的(de)(de)(de)(de)能量(liang)(liang)很低(di)，傳遞給基片(pian)(pian)的(de)(de)(de)(de)能量(liang)(liang)很小，致(zhi)使(shi)基片(pian)(pian)溫升較(jiao)低(di)。

磁控濺射(she)(she)是入射(she)(she)粒子(zi)(zi)和(he)靶(ba)(ba)的(de)碰(peng)撞過(guo)程(cheng)。入射(she)(she)粒子(zi)(zi)在靶(ba)(ba)中(zhong)經歷(li)復雜的(de)散射(she)(she)過(guo)程(cheng)，和(he)靶(ba)(ba)原(yuan)子(zi)(zi)碰(peng)撞，把(ba)部分(fen)動量傳(chuan)給靶(ba)(ba)原(yuan)子(zi)(zi)，此靶(ba)(ba)原(yuan)子(zi)(zi)又和(he)其他靶(ba)(ba)原(yuan)子(zi)(zi)碰(peng)撞，形成(cheng)級(ji)(ji)聯(lian)過(guo)程(cheng)。在這種級(ji)(ji)聯(lian)過(guo)程(cheng)中(zhong)某(mou)些表(biao)面(mian)附(fu)近(jin)的(de)靶(ba)(ba)原(yuan)子(zi)(zi)獲得向外運動的(de)足夠動量，離開(kai)靶(ba)(ba)被(bei)濺射(she)(she)出來。